| PART |
Description |
Maker |
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED
GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SI1913EDH SI1913EDH08 |
880 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual P-Channel 20-V (D-S) MOSFET
|
Vishay Siliconix
|
| MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF9085 MRF9085LR3 MRF9085LSR3 |
128K 3.3 VOLT SERIAL CONFIGURATION PROM
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| Q62703Q6175 Q62703Q1094 |
GaAlAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
| RA13H8891MB10 |
880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| OIS-330880 OIS-330880-X-TD OIS-330880-X-TU |
Series 330 - 1206 with Lens IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| OLS-150880-X-TD OLS-150880-X-TU OIS-150880 |
Series 150 - 1206 Standard IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| ACPM-5008-BLK ACPM-5008-TR1 |
UMTS Band8 (880-915MHz) 3x3mm Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|
